Magnetic levitation melting uses non-contact heating to avoid secondary contamination of metals by containers, effectively improving metal purity. At the same time, it can precisely control melting temperature and cooling rate, ensuring the microstructure uniformity of ultra-pure metals. It is one of the core processes for producing ultra-high purity metals above 8N.

The CuP anode (copper-phosphorus anode) provides a stable source of copper ions in the chip electroplating stage. Its phosphorus content can inhibit oxidation on the anode surface, ensuring the purity and uniformity of the electroplated layer. It is a key consumable in advanced packaging and wafer electroplating processes.

Evaporation materials (such as ultra-high purity aluminum, silver, etc.) are used for depositing the electrode layer of OLED panels. They form uniform metal films through vacuum evaporation, ensuring the conductivity and luminous uniformity of OLED screens, and are one of the core materials for high-end display panels.

Sputtering target OEM service provides processing according to customers’ customized requirements (e.g., size, purity, alloy ratio). It is especially suitable for small and medium-sized customers or pilot production needs of new processes, helping customers quickly obtain targets adapted to their own processes while reducing equipment investment costs in the R&D phase.

Tantalum targets are mainly used for depositing the barrier layer in chips, preventing copper atoms from diffusing into the silicon substrate; while copper targets are used for the conductive interconnection layer. The two are used together as the core material combination for the "barrier layer + interconnection layer" structure in advanced process chips.

Ultra-pure alloy ingot is the base material for targets, and its compositional uniformity and grain structure directly determine the sputtering performance of the target. For example, controlling the microstructure of copper-manganese alloy ingots enables the final copper-manganese target to form a more stable film during sputtering, improving the reliability of the chip’s interconnection layer.

Metals with 5N (99.999%) purity are commonly used in general semiconductor processes or display panels; 6N-7N purity is suitable for 14nm-7nm chip process nodes; while 8N-9N ultra-high purity metals (such as ultra-high purity copper) are core materials for 3nm and below advanced processes, preventing chip failure caused by impurities.

Copper targets are mainly used in the PVD (Physical Vapor Deposition) stage of semiconductor chip production. They deposit copper films on the wafer surface via sputtering, serving as the conductive interconnection layer inside the chip. Especially in advanced process nodes like 3nm, the purity and microstructure of copper targets directly affect the chip’s electrical conductivity and yield rate.